PART |
Description |
Maker |
HYB5116400BJ-50 HYB5116400BJ-50- HYB5116400BJ-60 H |
4M x 4 Bit FPM DRAM 5 V 4k 60ns 4M x 4 Bit FPM DRAM 5 V 4k 50ns -4M x 4-Bit Dynamic RAM
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB314400BJ-60 HYB314400BJ-50 HYB314400BJ-50- |
1M x 4 Bit FPM DRAM 3.3 V 60 ns -1M x 4-Bit Dynamic RAM
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
|
HY53C256 HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM 256K × 1位CMOS内存
|
Hynix Semiconductor, Inc.
|
UPD42S4280A |
256K x 18-Bit DRAM
|
NEC Electronics
|
HY53C256 HY53C256F HY53C256LF HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM
|
Hynix Semiconductor
|
HYB514175BJ-60 HYB514175BJ-55 HYB514175BJ-50 Q6710 |
256k x 16 Bit EDO DRAM 5 V 50 ns 256k x 16 Bit EDO DRAM 5 V 60 ns 256k x 16 Bit EDO DRAM 5 V 55 ns 256k x 16-Bit EDO-DRAM
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
KM44C258BJ-8 KM44C258BP-8 KM44C258BP-7 KM44C258BZ- |
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20 256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20 256K X 4 STATIC COLUMN DRAM, 70 ns, PDIP20 256K X 4 STATIC COLUMN DRAM, 80 ns, PZIP19
|
|
MT4C4256 |
256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率,扩展刷新,256K x 4动态RAM)
|
Micron Technology, Inc.
|
AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM(扩展数据总线
|
Alliance Semiconductor Corporation
|
HM514260AJ-7 HM514260ALJ-7 HM514260ALZ-10 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40 256K X 16 FAST PAGE DRAM, 100 ns, PZIP40
|
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